Second-generation platform delivers advanced control, in-cycle annealing, and high-throughput performance for Wide Bandgap power and RF device manufacturing ESPOO, Finland, Nov. 24, 2025 /PRNewswire/ ...
Al 2 O 3 (aluminum oxide) is especially well-studied as an ALD material and has been shown to offer excellent chemical ...
Inductively coupled plasma (ICP) sources were first developed decades ago, with regular use in the semiconductor industry at a time when plasma sources primarily deposited silicon oxide and silicon ...
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