Ezgi Dogmus, activity manager, Compound Semiconductors at Yole Group says: "Industry feedback suggests that total announced ...

Wales is set to benefit from a £250million investment from the semiconductor company Vishay Intertechnology, that will be ...

Farnell has signed a global distribution agreement with Micro Commercial Components (MCC) that will enable it to deliver ...

The dedicated semiconductor design centre, which has received £2.5m in Welsh Government investment, funding from Cadence, and ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with 3 kV devices with an on-resistance of around just 20 Ω mm. By breaking ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) ...

The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...