The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

Pulsiv, the UK power electronics innovator has won the PSMA's (Power Sources Manufacturers Association) first Global Energy Efficiency Award. The goal of the award was to recognise a "world ...

The dedicated semiconductor design centre, which has received £2.5m in Welsh Government investment, funding from Cadence, and ...

The 4-level converter operates over a wide range input from 4.5V to 18V covering USB and wireless charging standards. Current ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS (on)) for its solar inverter ...