In this study, a variety of RHBD techniques are evaluated at a 3-nm bulk FinFET technology node for alpha particles, heavy-ions, and 14-MeV neutron exposures for SEE. Experimental results show that ...

After FinFET comes gate all around, or GAA, which will be adopted on TSMC's 2 nm and Samsung's 3 nm nodes. Successive technologies improve electrical performance and miniaturization to fit as many ...

Lam Research benefits from the rise in AI-driven chip demand. Read why LRCX stock is a solid buy for long-term investors ...

Intel was stuck on its heavily delayed 10 nanometer (nm ... compared to Intel 3. First, Intel 18A uses a new transistor design called RibbonFET, replacing the previous FinFET architecture that ...

GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

For the 16 and 12-nm FinFET SRAMs, the maximum size of MCUs was 3-bits, whereas that was 7-bits for 20-nm bulk planar SRAMs. Furthermore, the differences of the physical pattern of MCUs are observed ...

Another 10 years later, by 2021, the top-of-the-line M2 processors used by Apple are chips built with 5-nm technology that contain 20 billion transistors. The complexity of integrated circuits has ...