Pulsiv, the UK power electronics innovator has won the PSMA's (Power Sources Manufacturers Association) first Global Energy Efficiency Award. The goal of the award was to recognise a "world ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

The 4-level converter operates over a wide range input from 4.5V to 18V covering USB and wireless charging standards. Current ...

Andy Nightingale, Vice President Product Management & Marketing at Arteris, discusses exciting developments at the company: the launch of FlexGen, smart network-on-chip IP accelerating chip design by ...

Ted Pawela, VP, Head of Customer Success at Renesas, introduces the Renesas 365, Powered by Altium, platform, which promises ...

The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

EPC continues to benefit from a ruling by the US ITC a couple of months ago, which previously confirmed that Innoscience ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...